Biosci. Chem. 2015 vol. 2, p. 1

Hot sodium hydroxide solution etched the polished surface of silicon wafers as measured by ellipsometry. Subsequent silanization of such etched surface utilizing 11-bromoundecyltrichlorosilane increased film thickness on the wafers. Further treatment with sodium azide for azide substitution of the bromo end group did not significantly change the surface film thickness.

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